| PART |
Description |
Maker |
| DD400S17K6CB2 |
Bare Die IGBT
|
Infineon Technologies AG
|
| S2305 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6203 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| M65KA512AB8W3 M65KA512AB |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| S4102 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4103 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2305-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2206 S2206-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| 5SMX12N4507 |
IGBT-Die 40 A, 4500 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
|
| 5SMX12H1251 |
IGBT-Die
|
ABB
|
| 5SMY12K1201 |
IGBT-Die
|
The ABB Group
|
